VCE:High-vacuum Epitaxial Growth System
Product FeaturesThe High-vacuum Epitaxial Growth System was developed based on a new concept introduced by US Chevron Research. By using the ultra-high vacuum process, material gas is supplied to wafers in molecular beam epitaxy so that a high level of uniform filming is created with fine thickness control. The applied showerhead system enables response to wafer growth of super-large diameter.
ApplicatiionsUnit for Si selective growth, SiC growth, GaAs growth, etc.
Degree of Vacuum 10-8order or below Substrate Size ～φ300mm Substrate Heating Radiant electric resistance heating system (Special PBN heater)・Heat temp. rising rate Max200℃ฺ/min or more